Category: Transistor circuit questions and answers pdf

Transistor circuit questions and answers pdf

When drain voltage equals the pinch-off-voltage, then drain current ………….

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If the reverse bias on the gate of a JFET is increased, then width of the conducting channel …………. A common base configuration of a pnp transistor is analogous to ………… of a JFET. In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ………. The pinch-off voltage in a JFET is analogous to ………. If the gate of a JFET is made less negative, the width of the conducting channel………. The gate voltage in a JFET at which drain current becomes zero is called ……….

The output characteristics of a JFET closely resemble the output characteristics of a ………. If the cross-sectional area of the channel in n-channel JEFT increases, the drain current ………. The pinch-off voltage Vp is ……. The value of the drain current is …………. The voltage gain is ………….

If the source resistor is completely bypassed, the voltage gain is …………. A certain common-source JFET has a voltage gain of If the source bypass capacitor is removed, ……………….

If load resistance in the above question Q. Your email address will not be published. A JFET has three terminals, namely ………… cathode, anode, grid emitter, base, collector source, gate, drain none of the above Ans : 3 2. A JFET is similar in operation to …………. The gate of a JFET is ………… biased reverse forward reverse as well as forward none of the above Ans : 1 6. The input impedance of a JFET is …………. In a p-channel JFET, the charge carriers are ………….

A JFET has ………. The input control parameter of a JFET is …………… gate voltage source voltage drain voltage gate current Ans : 1 A common base configuration of a pnp transistor is analogous to ………… of a JFET common source configuration common drain configuration common gate configuration none of the above Ans : 3 A JFET has high input impedance because ………… it is made of semiconductor material input is reverse biased of impurity atoms none of the above Ans : 2 In a JFET, when drain voltage is equal to pinch-off voltage, the depletion layers ……… almost touch each other have large gap have moderate gap none of the above Ans : 1 The two important advantages of a JFET are ………….

JFET many gate open gate insulated gate shorted gate Ans : 3 Which of the following devices has the highest input impedance? The pinch-off voltage of a JFET is about ………. In a FET, there are ………. The transconductance of a JFET ranges from …………….

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The source terminal of a JEFT corresponds to …………. The channel of a JFET is between the ……………. At cut-off, the JFET channel is ………. In a common-source JFET amplifier, the output voltage is ………………… o out of phase with the input in phase with the input 90o out of phase with the input taken at the source Ans : 1 The voltage gain is ………… 1 If the source resistor is completely bypassed, the voltage gain is ………… 45 2.Transistor is composed three regions: emitter base collector Emitter: It is a heavily doped and it is an n type material and having more free electrons.

It supplies charge carriers electrons and holes. It is always forward biased with respective to base to supply large no of majority carriers. Base: It is a another region composed of lightly doped n type material It has a few holes and having capable of carrying electrons. It is lightly doped and very thin. Collector: It is the n type material but not heavily doped and has free electrons.

Most of emitter carriers diffuse with the n base region and are attracting with the collector region Some of the electrons are attracted by the holes in the base region and move to the collector side. In an NPN transistor the emitter current is equal to sum of base current and collector current. In the NPN transistors current flows from collector to emitter. The working principle of an NPN transistor is such that when you increase current to the base terminal, then the transistor turns ON and it conducts fully from the collector to emitter.

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When you decrease the current to the base terminal, the transistor turns ON less and until the current is so low, the transistor no longer conducts across the collector to emitter, and shuts off. It is made up with two layers P type materials and sandwiched with one N type material. The direction of current flow from emitter to current. It is always reverse biased. The working principle of a PNP transistor is such that when the current exists at the base terminal of the transistor, then the transistor is shut off.

When there is no current at the base terminal of the PNP transistor, then the transistor turns on. Number of electrons in base region is very small hence no of holes combined with electrons in n type base is very small, to constitute base current IB.

The three different modes of operation of a transistor are Saturated Active region Cut-off When a transistor is in the fully-off state like an open switchit is said to be cut-of.

When it is fully conductive between emitter and collector passing as much current through the collector as the collector power supply and load will allowit is said to be saturated.

Bipolar transistors dont have to be restricted to these two extreme modes of operation. As we learned in the previous section, base current opens a gate for a limited amount of current through the collector. If this limit for the controlled current is greater than zero but less than the maximum allowed by the power supply and load circuit, the transistor will throttle the collector current in a mode somewhere between cut-off and saturation.

This mode of operation is called the active mode. In Active region emitter base junction is forward biased and collector base junction is reverse biased. In saturation region emitter base junction is forward biased and collector base junction is forward biased.

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In cut-off region emitter base junction is reverse biased and collector base junction is reverse biased. In this mode transistor has zero current. Step size is not fixed because of nonlinear curve. Initially vary VBB in steps of 0. Output Characteristics: Connect the circuit as shown in the circuit diagram.Because the transistor operation is carried out by two types of charge carriers majority and minority carriersan ordinary transistor is called bipolar.

The output voltage, current or power is controlled by the input current in a transistor. So it is called the current controlled device. Arrow head is always marked on the emitter.

The direction indicated the conventional direction of current flow from emitter-to-base in case of p-n-p transistor and from base-to-emitter in case of n-p-n transistor. Generally no arrow head is marked for collector since its reverse leakage current is always opposite to the direction of emitter current. For normal operation, base-emitter junction should be forward biased and the collector-base junction reverse biased.

transistor circuit questions and answers pdf

The amount of bias required is significant for the establishment of the operating or the Q-point which is dictated by the mode of operation desired. The ratio of current of injected carriers at emitter junction to the total emitter current is called the emitter junction efficiency. The ratio of collector current to base current is known as transport factor.

The larger the value of emitter injection efficiency, the larger the injected carriers at emitter junction and this increases the collector current. The emitter current I E is always the largest one. The base current I B is always the smallest. The collector current I C and emitter current IE are relatively close in magnitude. Because silicon transistor has smaller cut-off current I CBOsmall variations in I CBO due to variations in temperature and high operating temperature as compared to those in case of germanium type.

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Collector is made physically larger than emitter and base because collector is to dissipate much power. Base region of a transistor is kept very small and very lightly doped so as to pass most of the injected charge carriers to the collector. Emitter is always forward biased w. Collector is always reverse-biased w. Because in case of two discrete back-to-back connected diodes there are four doped regions instead of three and there is nothing that resembles a thin base region between an emitter and a collector.

transistor circuit questions and answers pdf

Although collector current is practically independent of collector supply voltage over the transistor operating range, but if V CB is increase beyond a certain vale collector current I C is eventually increases rapidly and possibly destroys the device. I CEO is given as :. CE configuration is mainly used because its current, voltage and power gains are quite high and the ratio of output impedance and input impedance are quite moderate.

Because of its high input impedance and low output impedance, the common collector circuit finds wide application as a buffer amplifier between a high impedance source and low impedance load. Its other name is emitter follower.

Common collector configuration has the highest input impedance and has voltage gain less than unity.Proper direct current Proper alternating current The base current small Collector current small Ans : 1.

Decrease in the base current Unfaithful amplification Excessive collector bias None of the above Ans : 2. Biasing circuit Bias battery Diode None of the above Ans : 1. For faithful amplification by a transistor circuit, the value of VBE should ………. Be zero Be 0. Proper forward bias Proper reverse bias Very small size None of the above Ans : 2. For faithful amplification by a transistor circuit, the value of VCE should ………. Not fall below 1 V Be zero Be 0.

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Base resistor bias Collector feedback bias Potential divider bias None of the above Ans : 3. Operating point Current gain Voltage gain None of the above Ans : 1. The zero signal IC is generally ……………… mA in the initial stages of a transistor amplifier.

If the maximum collector current due to signal alone is 3 mA, then zero signal collector current should be at least equal to ………. The disadvantage of base resistor method of transistor biasing is that it …………. The biasing circuit has a stability factor of For good stabilsation in voltage divider bias, the current I1 flowing through R1 and R2 should be equal to or greater than.

The leakage current in a silicon transistor is about ………… the leakage current in a germanium transistor. One hundredth One tenth One thousandth One millionth Ans : 3. Cut off point Quiescent point Saturation point None of the above Ans : 2. For proper amplification by a transistor circuit, the operating point should be located at the ………….

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The end point Middle The maximum current point None of the above Ans : 2. Also line Does not lie May or may not lie Data insufficient Ans : 1. High stability factor Low base current Many resistors None of the above Ans : 3. Collector is reverse biased Transistor is not biased Emitter is forward biased Junction capacitance is high Ans : 2. The purpose of resistance in the emitter circuit of a transistor amplifier is to …………. Limit the maximum emitter current Provide base-emitter bias Limit the change in emitter current None of the above Ans : 3.

Amplifier circuits Switching circuits Rectifier circuits None of the above Ans : 2. For germanium transistor amplifier, VCE should …………. The stability factor of a collector feedback bias circuit is ………. The same as More than Less than None of the above Ans : 3.

In the design of a biasing circuit, the value of collector load RC is determined by …………. Remains the same Decreases Increases None of the above Ans : 2. Remains the same Is increased Is decreased None of the above Ans : 3.

The stabilisation of operating point in potential divider method is provided by ………. A silicon transistor is biased with base resistor method.In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well:.

The number of depletion layers in a transistor is …………. The element that has the biggest size in a transistor is ………………. In a npn transistor, ……………. The emitter of a transistor is ………………… doped. In a transistor, the base current is about …………. At the base-emitter junctions of a transistor, one finds ……………. Most of the majority carriers from the emitter ………………. The output impedance of a transistor is …………….

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The most commonly used transistor arrangement is …………… arrangement. The input impedance of a transistor connected in ……………. The output impedance of a transistor connected in ……………. The phase difference between the input and output voltages in a common base arrangement is …………….

The power gain in a transistor connected in …………….

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The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ………………. The voltage gain in a transistor connected in ………………. As the temperature of a transistor goes up, the base-emitter resistance ……………. The voltage gain of a transistor connected in common collector arrangement is ………. The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ……………….

BC transistor indicates that it is made of …………. A transistor is connected in CB mode. In a transistor, signal is transferred from a …………… circuit. The arrow in the symbol of a transistor indicates the direction of ………….

The leakage current in CE arrangement is ……………. A heat sink is generally used with a transistor to …………. The most commonly used semiconductor in the manufacture of a transistor is ………….The input impedance of a transistor connected in …………….

The output impedance of a transistor connected in ……………. The phase difference between the input and output voltages in a common base arrangement is ……………. The power gain in a transistor connected in …………….

transistor circuit questions and answers pdf

The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ………………. The voltage gain in a transistor connected in ………………. As the temperature of a transistor goes up, the base-emitter resistance …………….

Electrical Engineering: Ch 3: Circuit Analysis (29 of 37) NPN Transistor Current Gain

The voltage gain of a transistor connected in common collector arrangement is ………. The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ………………. A transistor is connected in CB mode. The most commonly used semiconductor in the manufacture of a transistor is ………….

Your email address will not be published. A transistor has ………………… 1. The number of depletion layers in a transistor is ………… four three one two ANS : 4 3. The base of a transistor is …………. The element that has the biggest size in a transistor is ………………. In a pnp transistor, the current carriers are …………. The collector of a transistor is …………. A transistor is a …………… operated device current voltage both voltage and current none of the above ANS : 1 8. In a npn transistor, …………….

The emitter of a transistor is ………………… doped lightly heavily moderately none of the above ANS : 2 In a transistor, the base current is about …………. At the base-emitter junctions of a transistor, one finds …………… a reverse bias a wide depletion layer low resistance none of the above ANS : 3 The input impedance of a transistor is …………. Most of the majority carriers from the emitter ………………. The current IB is ………… electron current hole current donor ion current acceptor ion current ANS : 1 In a transistor ……………….

The value of a of a transistor is ………. The output impedance of a transistor is ……………. The most commonly used transistor arrangement is …………… arrangement common emitter common base common collector none of the above ANS : 1 The phase difference between the input and output voltages of a transistor connected in common emitter arrangement is ……………… 0o o 90o o ANS : 2 As the temperature of a transistor goes up, the base-emitter resistance …………… decreases increases remains the same none of the above ANS : 1 The phase difference between the input and output voltages of a transistor connected in common collector arrangement is ……………… o 0o 90o o ANS : 2 An operational amplifier, abbreviated as op-amp, is basically a multi-stage, very high gain, direct-coupled, negative feedback amplifier that uses voltage shunt feedback to provide a stabilized voltage gain.

The curve drawn between output voltage and input differential voltage, for an op-amp, keeping voltage gain A constant is known as voltage transfer curve. When the difference of the two inputs applied to the two terminals of a differential amplifier is amplified, the resultant gain is termed as differential gain. But when the two input terminals are connected to the same input source then the gain established by the differential amplifier is called the common mode gain.

transistor circuit questions and answers pdf

High CMRR ensures that the common mode signals such as noise are rejected successfully and the output voltage is proportional only to the differential input voltage. When an op-amp is operated in the open-loop configuration, the output either goes to positive saturation or negative saturation levels or switches between positive and negative saturation levels and thus clips the output above these levels.

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So open-loop op-amp configurations are not used in linear applications. Input offset voltage may be defined as that voltage which is to be applied between the input terminals to balance the amplifier.

Voltage follower is an electronic circuit in which output voltage tracts the input voltage both in sign and magnitude.

Voltage follower has three unique characteristics viz. In Explain what way is the voltage follower a special case of the non-inverting amplifier?

Inverting amplifier is a very versatile component and can be used for performing number of mathematical stimulation such as analog inverter, paraphrase amplifier, phase shifter, adder, integrator, differentiator. Differential amplifier is a combination of inverting and noninverting amplifiers and amplifies the voltage difference between input lines neither of which is grounded.

Adder or summing amplifier is a circuit that provides an output voltage proportional to or equal to the algebraic sum of two or more input voltages multiplied by a constant gain factor. Op-amp is used mostly as an integrator than a differentiator because in differentiator at high frequency, gain is high and so high-frequency noise is also amplified which absolutely abstract the differentiated signal.

What is CMRR? What is Amplifier? In this condition it is known as perfect balance. It is called high gain differential circuit because the difference of the two input is amplified. It is called operational amplifier because it is used for performing different functions like differentiation, addition, integration, subtraction.

It has infinite voltage gain, infinite slew rate, infinite input impedance, zero output impedance, infinite bandwidth. What is the output Differentiator and Integrator? If we give the sinusoidal input in differentiator we will get the output of differentiator as a square output. If we give the sinusoidal input in integrator we will get the output of integrator as a ramp output.

For the CMRR to be infinite what will be the condition? An ideal operational amplifier has A. All of the above Answer: C. Another name for a unity gain amplifier is: A. The open-loop voltage gain Aol of an op-amp is the A.

A series dissipative regulator is an example of a: A. A noninverting closed-loop op-amp circuit generally has a gain factor: A. In order for an output to swing above and below a zero reference, the op-amp circuit requires: A.

Op-amps used as high- and low-pass filter circuits employ which configuration? An astable multivibrator is also known as a: A. With negative feedback, the returning signal: A. What starts a free-running multivibrator? A portion of the output that provides circuit stabilization is considered to be: A.

The closed-loop voltage gain of an inverting amplifier equals: A.


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